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Samsung (9100 PRO) 1TB Internal SSD PCIe Gen 5x4 NVMe, Speeds Up to 14700 MB/s

4.80
★★★★★★★★★★
Ratings5
In stock
The Samsung 9100 PRO 1TB Internal SSD is designed for high-performance computing with its PCIe Gen 5x4 NVMe interface, delivering impressive sequential read speeds of up to 14,700 MB/s and write speeds of up to 13,300 MB/s. This M.2 (2280) form factor SSD features a robust 1TB storage capacity and utilizes Samsung's V-
KWD 96.900
KWD 103.685
SKU :
MZ-VAP1T0B/AM
4 interest-free payments of KWD 26.048Learn more
Split into 4 payments of KWD 26.049 interest-free.Learn more
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Estimated delivery:1 work day
Free return within: 14 days of purchase
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Overview

High-Speed Performance

The Samsung 9100 PRO 1TB Internal SSD features a PCIe Gen 5x4 NVMe interface, achieving sequential read speeds of up to 14,700 MB/s and write speeds of up to 13,300 MB/s. This exceptional performance is ideal for high-demand computing tasks, ensuring rapid data access and transfer.

High-Speed Performance
Robust Storage Capacity

Robust Storage Capacity

With a generous 1TB storage capacity, this M.2 (2280) form factor SSD provides ample space for applications, games, and files. Its compact dimensions of 0.9 x 0.09 x 3.2 inches and lightweight design of 0.02 lb make it suitable for both desktop and laptop upgrades.

Enhanced Reliability

Utilizing Samsung's V-NAND TLC Flash Technology and an in-house controller, the 9100 PRO ensures reliable performance and durability. The drive boasts an endurance rating of 800 TBW, making it capable of handling demanding applications with ease.

Enhanced Reliability
Data Security Features

Data Security Features

The Samsung 9100 PRO supports advanced data encryption standards, including AES 256-bit encryption, ensuring the security of your data. Additionally, it features 1GB LPDDR4X cache memory for efficient data processing, enhancing overall system performance.

Key Specifications

  • Model No: Samsung (9100 PRO) 1TB Internal SSD PCIe Gen 5x4 NVMe
  • Part No: MZ-VAP1T0B/AM
  • Capacity: 1TB
  • Form Factor: M.2 (2280)
  • Interface: PCIe® 5.0 x4, NVMe™ 2.0
  • Read Speed: Sequential: 14,700 MB/s
  • Write Speed: Sequential: 13,300 MB/s
  • Ran. Read/Write (IOPS,QD32): 1,850K / 2,600K
  • Endurance (Total Bytes Written): 800 TB
  • Power: Active (Read/Write): 7.6W / 7.2W Device Sleep (L1.2): 4.0mW / 3.3mW
  • Data Encryption: Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
  • Cache Memory: 1GB LPDDR4X
  • Special Features: 1TB Storage Capacity M.2 2280 Form Factor PCIe 5.0 x4 / NVMe 2.0 Interface Sequential Reads up to 14,700 MB/s Sequential Writes up to 13,300 MB/s 1GB LPDDR4x Cache Memory Endurance (TBW): 800TB Samsung V-NAND TLC Flash Technology Samsung In-House Controller AES 256-Bit Encryption
  • Product Size ( Dimension ): 0.9 x 0.09 x 3.2 (in.)
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