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Samsung (9100 PRO) 2TB Internal SSD PCIe Gen 5x4 NVMe, Speeds Up to 14700 MB/s

4.90
★★★★★★★★★★
Ratings21
In stock
The Samsung 9100 PRO 2TB Internal SSD features a PCIe Gen 5x4 NVMe interface, delivering exceptional performance with sequential read speeds of up to 14,700 MB/s and write speeds of up to 13,400 MB/s. This M.2 (2280) form factor SSD is equipped with 2GB of LPDDR4X cache memory and offers an impressive endurance rating
KWD 155.800
KWD 166.705
SKU :
MZ-VAP2T0B/AM
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4 interest-free payments of KWD 41.882Learn more
Split into 4 payments of KWD 41.882 interest-free.Learn more
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Overview

High-Speed Performance

The Samsung 9100 PRO 2TB Internal SSD utilizes a PCIe Gen 5x4 NVMe interface, achieving remarkable sequential read speeds of up to 14,700 MB/s and write speeds of 13,400 MB/s. This performance is ideal for demanding applications and high-performance computing tasks.

High-Speed Performance
Robust Endurance

Robust Endurance

With an endurance rating of 1200 TBW, the Samsung 9100 PRO is designed for longevity and reliability. This SSD is equipped with 2GB of LPDDR4X cache memory, enhancing data processing efficiency and ensuring consistent performance over time.

Compact Design

The M.2 (2280) form factor of the Samsung 9100 PRO measures just 0.9 x 0.09 x 3.2 inches and weighs only 0.02 lb. This compact size makes it suitable for a variety of systems, ensuring easy integration into your setup without compromising space.

Compact Design
Enhanced Data Security

Enhanced Data Security

The Samsung 9100 PRO features AES 256-bit encryption, providing robust data security for sensitive information. This SSD also supports TCG/Opal v2.0 and MS eDrive, ensuring compliance with modern security standards for data protection.

Key Specifications

  • Model No: Samsung (9100 PRO) 2TB Internal SSD PCIe Gen 5x4 NVMe
  • Part No: MZ-VAP2T0B/AM
  • Capacity: 2TB
  • Form Factor: M.2 (2280)
  • Interface: PCIe® 5.0 x4, NVMe™ 2.0
  • Read Speed: Sequential: 14,700 MB/s
  • Write Speed: Sequential: 13,400 MB/s
  • Ran. Read/Write (IOPS,QD32): 1,850K / 2,600K
  • Endurance (Total Bytes Written): 1200 TB
  • Power: Active (Read/Write): 8.1W / 7.9W Device Sleep (L1.2): 4.8mW / 4.0mW
  • Data Encryption: Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
  • Cache Memory: 2GB LPDDR4X
  • Special Features: 2TB Storage Capacity M.2 2280 Form Factor PCIe 5.0 x4 / NVMe 2.0 Interface Sequential Reads up to 14,700 MB/s Sequential Writes up to 13,400 MB/s 2GB LPDDR4x Cache Memory Endurance (TBW): 1200TB Samsung V-NAND TLC Flash Technology Samsung In-House Controller AES 256-Bit Encryption
  • Product Size ( Dimension ): 0.9 x 0.09 x 3.2 (in.)
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